1 standard products ut28f256qle radiation-hardened 32k x 8 prom data sheet march 2007 www.aeroflex.com/radhard features ? programmable, read-only, asynchronous, radiation- hardened, 32k x 8 memory - supported by industry standard programmer ? 45ns maximum address access time (-55 o c to +125 o c) ? ttl compatible input and ttl/cmos compatible output levels ? three-state data bus ? low operating and standby current - operating: 80ma maximum @25mhz ? derating: 3ma/mhz - standby: 1.5ma maximum (post-rad) ? radiation-hardened process and design; total dose irradiation testing to mil-std-883, method 1019 - total dose: 100krad to 1megarad(si) - onset let: 57 mev-cm 2 /mg - sel immune > 110 mev-cm 2 /mg ? qml q & v compliant part - ac and dc testing at factory ? no post program conditioning ? packaging options: - 28-lead 50-mil center flatpack (0.490 x 0.74) ? v dd : 5.0 volts + 10% ? standard microcircuit drawing 5962-96891 product description the ut28f256qle amorphous silicon redundant vialink tm prom is a high performance, asynchronous, radiation- hardened, 32k x 8 programmable memory device. the ut28f256qle prom features fully asychronous operation requiring no external clocks or timing strobes. an advanced radiation-hardened twin-well cmos process technology is used to implement the ut28f256qle. the combination of radiation- hardness, fast access time, and lo w power consumption make the ut28f256qe ideal for high speed systems designed for operation in radiation environments. decoder memory array sense amplifier programming control logic dq(7:0) a(14:0) ce pe oe figure 1. prom block diagram
2 device operation the ut28f256qle has three control inputs: chip enable (ce ), program enable (pe ), and output enable (oe ); fifteen address inputs, a(14:0); and eight bidirectional data lines, dq(7:0). ce is the device enable input that c ontrols chip selection, active, and standby modes. asserting ce causes i dd to rise to its active value and decodes the fifteen address inputs to select one of 32,768 words in the memory. pe controls program and read operations. during a read cycle, oe must be asserted to enable the outputs. pin names table 1. device operation truth table 1 notes: 1. ?x? is defined as a ?don?t care? condition. 2. device active; outputs disabled. absolute maximum ratings 1 (referenced to v ss ) notes: 1. stresses outside the listed absolute maximu m ratings may cause permanent damage to the device. this is a stress rating only, and functional operation of the device at these or any other conditions beyon d limits indicated in the operational sec tions of this specification is not r ecommended. exposure to absolute maximum rati ng conditions for extended period s may affect device reliability. 2. test per mil-std-883, method 1012, infinite heat sink. a14 a12 a7 a6 a5 a4 a3 a2 a1 a0 dq0 dq1 dq2 v ss v dd pe a13 a8 a9 a11 oe a10 ce dq7 dq6 dq5 dq4 dq3 pin configuration 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 a(14:0) address ce chip enable oe output enable pe program enable dq(7:0) data input/data output oe pe ce i/o mode mode x 1 1 three-state standby 0 1 0 data out read 1 0 0 data in program 1 1 0 three-state read 2 symbol parameter limits units v dd dc supply voltage -0.3 to 6.0 v v i/o voltage on any pin -0.5 to (v dd + 0.5) v t stg storage temperature -65 to +150 c p d maximum power dissipation 1.5 w t j maximum junction temperature +175 c jc thermal resistance, junction-to-case 2 3.3 c/w i i dc input current 10 ma
3 recommended operating conditions dc electrical characteristics (pre/post-radiation)* (v dd = 5.0v 10%; -55 c < t c < +125 c) notes: * post-radiation perform ance guaranteed at 25 c per mil-std-883 method 1019 at 1e6 rad(si). 1. measured only for in itial qualification, and after process or design changes that could affect input/output capacitance. 2. supplied as a design limit bu t not guaranteed or tested. 3. not more than one output may be shorted at a time for maximum duration of one second. 4. derates at 3.2ma/mhz. symbol parameter limits units v dd positive supply voltage 4.5 to 5.5 v t c case temperature range -55 to +125 c v in dc input voltage 0 to v dd v symbol parameter condition minimum maximum unit v ih high-level input voltage (ttl) 2.4 v v il low-level input voltage (ttl) 0.8 v v ol1 low-level output voltage i ol = 4.0ma, v dd = 4.5v (ttl) 0.4 v v ol2 low-level output voltage i ol = 200 a, v dd = 4.5v (cmos) v ss + 0.10 v v oh1 high-level output voltage i oh = -200 a, v dd = 4.5v (cmos) v dd -0.1 v v oh2 high-level output voltage i oh = -2.0ma, v dd = 4.5v (ttl) 2.4 v c in 1 input capacitance , all inputs except pe input capacitance pe ? = 1mhz, v dd = 5.0v v in = 0v 15 20 pf c io 1 bidirectional i/o capacitance ? = 1mhz, v dd = 5.0v v out = 0v 15 pf i in input leakage current v in = 0v to v dd , all pins except pe v in = v dd , pe only -5 +5 132 a a i oz three-state output leakage current v o = 0v to v dd v dd = 5.5v oe = 5.5v -10 +10 a i os 2,3 short-circuit output current v dd = 5.5v, v o = v dd v dd = 5.5v, v o = 0v -120 120 ma ma i dd1 (op) 4 supply current operating @22.2mhz (45ns product) ttl inputs levels (i out = 0), v il = 0.2v v dd , pe = 5.5v 80 ma i dd2 (sb) post-rad supply current standby cmos input levels v il = v ss +0.25v ce = v dd - 0.25 v ih = v dd - 0.25v 1.5 ma
4 read cycle a combination of pe greater than v ih (min), and ce less than v il (max) defines a read cycle. read access time is measured from the latter of device enable, output enable, or valid address to valid data output. an address access read is initiated by a change in address inputs while the chip is enabled with oe asserted and pe deasserted. valid data appears on data output, dq(7:0), after the specified t av q v is satisfied. outputs remain active throughout the entire cycle. as long as device enable and output enable are active, the address inputs may change at a rate equal to the minimum read cycle time. the chip enable-controlled access is initiated by ce going active while oe remains asserted, pe remains deasserted, and the addresses remain stable for the en tire cycle. after the specified t elqv is satisfied, the eight-bit word addressed by a(14:0) appears at the data outputs dq(7:0). output enable-controlled access is initiated by oe going active while ce is asserted, pe is deasserted, and the addresses are stable. read access time is t glqv unless t avqv or t elqv have not been satisfied. ac characteristics read cycle (post-radiation)* (v dd = 5.0v 10%; -55 c < t c < +125 c) notes: * post-radiation performance guaranteed at 25 c per mil-std-883 method 1019 at 1e6 rads(si). 1. functional test. 2. three-state is defined as a 200mv ch ange from steady-state output voltage. symbol parameter 28f256-45 min max unit t avav 1 read cycle time 45 ns t av q v read access time 45 ns t axqx 2 output hold time 0 ns t glqx 2 oe -controlled output enable time 0 ns t glqv oe -controlled access time 15 ns t ghqz oe -controlled output three-state time 15 ns t elqx 2 ce -controlled output enable time 0 ns t elqv ce -controlled access time 45 ns t ehqz ce -controlled output three-state time 15 ns
5 radiation hardness the ut28f256qle prom incorporates special design and layout features which allow operation in high-level radiation environments. aeroflex colorado springs has developed special low-temperature processing techniques designed to enhance the total-dose radiation hardness of both the gate oxide and the field oxide while maintaining the circuit density and reliability. for transient radiation hardness and latchup immunity, utmc builds all radiation-hardened products on epitaxial wafers using an advanced twin-tub cmos process. in addition, utmc pays special attention to power and ground distribution during the design phase, minimizing dose-rate upset caused by rail collapse. radiation hardness design specifications 1 note: 1. the prom will not latchup during radiation ex posure under recommended operating conditions. figure 2. prom read cycle t avav t avqv t elqv t glqv t avqv t axqx t ehqz t ghqz a(14:0) ce oe dq(7:0) t glqx t elqx total dose 1e6 rad(si) latchup let threshold >110 mev-cm 2 /mg memory cell let threshold >100 mev-cm 2 /mg logic onset let >57 mev-cm 2 /mg seu cross section 9.4e-7 cm 2 /device error rate - geosynchronou s orbit, adams 90% worst case environment 5.1e-15 errors/device day
6 notes: 1. 50pf including scope probe and test socket. 2. measurement of data output occurs at the low to high or high to lo w transition mid-point (ttl input = 1.5v). 90% figure 3. ac test loads and input waveforms input pulses 10% < 5ns < 5ns ttl 0v 3.0v 330 ohms v ref =1.73v 50pf 90% 10%
7 0.015 0.008 0.015 0.008 pin no. 1 id. 6 26 places 0.050 bsc e e1 0.550 max -b- 7 s1 (4) places 0.000 min. 7 -d- -c- a 0.115 0.045 0.045 0.026 l 0.370 0.250 e2 0.180 min e3 0.030 min e 0.520 0.460 -h- c 0.009 0.004 0.040 0.022 0.015 28 places -a- h a-b d 5 s s 0.010 m h a-b d 5 s s m 0.036 top view end view b k k q figure 5. 28-lead 50-mil ce nter flatpack (0.490 x 0.74) notes: 1. all exposed metalized areas to be plated per mil-prf-38535. 2. the lid is connected to v ss . 3. lead finishes are in accordance with mil-prf-38535. 4. dimension letters refer to mil-std-1835. 5. lead position and copl anarity are not measured. 6. id mark symbol is vendor option. 7. with solder, incr ease maximum by 0.003. 8. total weight is approximately 2.4 grams. d 0.740 max
8 ordering information 256kqle prom: smd lead finish: (a) = solder (c) = gold (x) = optional case outline: (x) = 28-lead flatpack class designator: (q) = class q (v) = class v device type (09) = 45ns access time, ttl inpu ts, cmos/ttl compatible outputs (10) = 45ns access time, ttl inputs, cmos/ttl compatible outputs exte nded industrial temp (-40 c c to +125 o c) drawing number: 96891 total dose: (f) = 3e5 rads(si) (g) = 5e5 rads(si) (h) = 1e6 rads(si) (r) = 1e5 rads(si) federal stock class designator: no options 5962 * 96891 * * * * notes: 1. lead finish (a, c, or x) must be specified. 2. if an ?x? is specified when ordering, part marking will match the lead finish and will be either ?a? (solder) or ?c? (gold). 3. total dose radiation must be specified when ordering. qml q and qml v not available without radiation hardening. 4. device type 09 available with total dose of 1e5 rads(si) or 3e5 rads(si).
9 256kqle prom ut **** * ** - * * * * * * total dose: ( ) = total dose characteristics neither tested nor guaranteed lead finish: (a) = solder (c) = gold (x) = optional screening: (c) = mil temp (p) = prototype (w) = extended industrial temp (-40 c c to +125 o c) package type: (u) = 28-lead flatpack access time: (45) = 45ns access time, ttl compatible inputs, cmos/ttl compatible outputs device type modifier: (t) = ttl compatible inputs and cmos/ttl compatible outputs device type: (28f256qle) = 32kx8 one time programmable prom notes: 1. lead finish (a,c, or x) must be specified. 2. if an ?x? is specified when ordering, then the part marking will match the lead finish and will be eith er ?a? (solder) or ?c? (gold). 3. military temperature range flow per aeroflex colorado spring s manufacturing flows document. radiation characteristics are nei ther tested nor guaranteed and may not be specified. 4. prototype flow per aeroflex colorado springs manufacturing flow s document. devices have prototype assembly and are tested at 25 c only. radiation characteristics are neither tested nor guaranteed an d may not be specified. lead finish is gold only. 5. extended industrial range flow per aero flex colorado springs manufacturing flow s document. devices are tested at -40 c, room temp, and 125 c. radiation neither tested nor guaranteed.
10 colorado toll free: 800-645-8862 fax: 719-594-8468 se and mid-atlantic tel: 321-951-4164 fax: 321-951-4254 international tel: 805-778-9229 fax: 805-778-1980 west coast tel: 949-362-2260 fax: 949-362-2266 northeast tel: 603-888-3975 fax: 603-888-4585 central tel: 719-594-8017 fax: 719-594-8468 www.aeroflex.com info-ams@aeroflex.com our passion for performance is defined by three attributes represented by these three icons: solution-minded, performance-driven and customer-focused aeroflex colorado springs, inc., reserves the right to make changes to any products and services herein at any time without notice. consult aeroflex or an authorized sales representative to verify that the information in this data sheet is current before using this product. aeroflex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by aeroflex; nor does the purchase, lease, or use of a pr oduct or service from aeroflex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of aeroflex or of third parties.
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